PART |
Description |
Maker |
FDC8601 |
N-Channel Shielded Gate PowerTrench MOSFET
|
Fairchild Semiconductor
|
FDMC86340 |
N-Channel Shielded Gate Power Trench MOSFET 80 V, 48 A, 6.5 mΩ
|
Fairchild Semiconductor
|
142-06J08SL 144-06J12L 143-16J12SL 142-06J08L 143- |
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.22 uH - 0.248 uH, VARIABLE INDUCTOR RF inductor, tunable, Carbonyl J core, RoHS UNSHIELDED, 0.193 uH - 0.306 uH, VARIABLE INDUCTOR RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.638 uH - 0.801 uH, VARIABLE INDUCTOR RF inductor, tunable, Carbonyl J core, RoHS UNSHIELDED, 0.275 uH - 0.355 uH, VARIABLE INDUCTOR RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.315 uH - 0.423 uH, VARIABLE INDUCTOR RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.115 uH - 0.121 uH, VARIABLE INDUCTOR RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.382 uH - 0.422 uH, VARIABLE INDUCTOR RF inductor, tunable, Carbonyl J core, RoHS UNSHIELDED, 0.391 uH - 0.493 uH, VARIABLE INDUCTOR RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.355 uH - 0.477 uH, VARIABLE INDUCTOR RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.693 uH - 0.846 uH, VARIABLE INDUCTOR
|
Coilcraft, Inc. COILCRAFT INC
|
ACSL-6300 ACSL-6420 ACSL-6420-56R ACSL-6420-56T AC |
4 CHANNEL LOGIC OUTPUT OPTOCOUPLER ECONOLINE: RBM - New Micro Size SIP 6 Package- Industry Standard Pinout- 3kVDC Isolation- UL94V-0 Package Material- Efficiency to 85% 多通道和双向,15 MBd的数字逻辑门光电耦合 (ACSL6xx0) Multi-Channel and Bi-Directional / 15 MBd Digital Logic Gate Optocoupler (ACSL-6xx0) Multi-Channel and Bi-Directional / 15 MBd Digital Logic Gate Optocoupler ACSL-6210-00R · Multi-Channel and Bi-Directional, 15 MBd Digital Logic Gate Optocoupler ACSL-6400-00T · Multi-Channel and Bi-Directional, 15 MBd Digital Logic Gate Optocoupler
|
AGILENT TECHNOLOGIES INC Glenair, Inc. TE Connectivity, Ltd. HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
MGW14N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP4N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP21N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP7N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
3SK320 |
RF Dual Gate FETs N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP, MIX)
|
Toshiba Semiconductor
|
165-05A06S 164-04A06 165-04A06S |
NOT RoHS. RF inductor, tunable, aluminum core, shielded (add 'L' for compliant version) SHIELDED, 0.043 uH - 0.05 uH, VARIABLE INDUCTOR UNSHIELDED, 0.052 uH - 0.077 uH, VARIABLE INDUCTOR SHIELDED, 0.035 uH - 0.041 uH, VARIABLE INDUCTOR
|
Coilcraft, Inc. COILCRAFT INC
|
|